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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D379
BLA1011-200 Avionics LDMOS transistor
Product specification Supersedes data of 2001 May 15 2002 Mar 18
Philips Semiconductors
Product specification
Avionics LDMOS transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS * Avionics transmitter applications in the 1030 to 1090 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 50 s; = 2 % f (MHz) 1030 to 1090 VDS (V) 36 PL (W) 200 Gp (dB) >13; typ. 15 D (%) >45; typ. 50
Top view
handbook, halfpage
BLA1011-200
PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
2
3
MBK394
Fig.1 Simplified outline SOT502A.
tr (ns) <50; typ. 35
tf (ns) <50; typ. 6
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Th 25 C; tp = 50 s; = 2 % CONDITIONS - - - -65 - MIN. MAX. 75 22 700 +150 200 V V W C C UNIT
2002 Mar 18
2
Philips Semiconductors
Product specification
Avionics LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Zth j-h Note 1. Thermal resistance is determined under RF operating conditions; tp = 50 s, = 10 %. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 3 mA VDS = 10 V; ID = 300 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 10 A VGS = 9 V; ID = 10 A MIN. 75 4 - 45 - - - PARAMETER thermal impedance from junction to heatsink CONDITIONS Th = 25 C; note 1
BLA1011-200
VALUE 0.15
UNIT K/W
TYP. - - - - - 9 60
MAX. - 5 1 - 1 - -
UNIT V V A A A S m
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Zth mb-h = 0.15 K/W; unless otherwise specified. MODE OF OPERATION Pulsed class-AB; tp = 50 s; = 2 % f (MHz) 1030 to 1090 VDS (V) 36 PL (W) 200 Gp (dB) >13; typ. 15 D (%) >45; typ. 50 tr (ns) <50; typ. 35 tf (ns) <50; typ. 6
Ruggedness in class-AB operation The BLA1011-200 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V; f = 1030 to 1090 MHz at rated load power.
2002 Mar 18
3
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-200
handbook, halfpage
20
MGW033
80 D (%) 60
handbook, halfpage
250
MGW034
Gp (dB) 15
PL (W) 200
Gp
150 10 D 40 100 20 50
5
0 0 50 100 150
0 250 200 PL (W)
0 0 2 4 6 PD (W) 8
VDS = 36 V; IDQ = 150 mA; f = 1060 MHz; tp = 50 s; = 2 %.
VDS = 36 V; IDQ = 150 mA; f = 1060 MHz; tp = 50 s; = 2 %.
Fig.2
Power gain and efficiency as functions of load power; typical values.
Fig.3
Load power as a function of drive power; typical values.
handbook, halfpage
20
MGW035
handbook, halfpage
250
MGW036
20 Gp (dB) 16
Gp (dB) 16
I DQ = 1.5 A 150 mA
PL (W) 200 Gp
12
150 PL
12
8
100
8
4
50
4
0 0 50 100 150 200 250 PL (W)
0 0 1 2 3 4 VGS (V) 5
0
VDS = 36 V; f = 1060 MHz; tp = 50 s; = 2 %.
VDS = 36 V; IDQ = 150 mA; PD = 5.5 W; f = 1060 MHz; tp = 50 s; = 2 %.
Fig.4
Power gain as a function of load power; typical values.
Fig.5
Load power and power gain as functions of gate-source voltage; typical values.
2002 Mar 18
4
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-200
handbook, halfpage
20
MGW037
80 D (%) 60
handbook, halfpage
5
MGW038
Gp (dB) 15
Gp
Zi () 4
xi
ri D 3 40 2 5 20 1
10
0 1020
1040
1060
1080
0 1100 f (MHz)
0 1020
1040
1060
1080
1100 f (MHz)
VDS = 36 V; IDQ = 150 mA; PL = 200 W; tp = 50 s; = 2 %.
VDS = 36 V; IDQ = 150 mA; PL = 200 W; tp = 50 s; = 2 %.
Fig.6
Power gain and efficiency as functions of frequency; typical values.
Fig.7
Input impedance as a function of frequency (series components); typical values.
handbook, halfpage
4
MGW039
ZL () 2
RL 0
-2
XL
-4 1020
1040
1060
1080
1100 f (MHz)
VDS = 36 V; IDQ = 150 mA; PL = 200 W; tp = 50 s; = 2 %.
Fig.8
Load impedance as a function of frequency (series components); typical values.
2002 Mar 18
5
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-200
handbook, full pagewidth
40
40
60
C6
+
C5 R2 C4 C3 C1 R1
C10 C9
+
C11
C8 L1 C7
C2
MGW032
Dimensions in mm. The components are situated on one side of the copper-clad Duroid printed-circuit board with r = 6.2 and thickness 0.64 mm. The other side is unetched and serves as a ground plane.
Fig.9 Component layout for 1030 to 1090 MHz test circuit.
2002 Mar 18
6
Philips Semiconductors
Product specification
Avionics LDMOS transistor
List of components (see Fig.9) COMPONENT C1 C2 C3 C4, C7 C5 C6 C8 C9 C10 C11 L1 R1 R2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. American Technical Ceramics type 700 or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 3 electrolytic capacitor -shaped enamelled 1 mm copper wire metal film resistor SMD0508 resistor 301 18
BLA1011-200
VALUE 39 pF 4.3 pF 11 pF 62 pF 100 pF 47 F; 20 V 20 pF 47 pF 1.2 nF 47 F; 63 V
DIMENSIONS
length = 38 mm
2002 Mar 18
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Philips Semiconductors
Product specification
Avionics LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLA1011-200
SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.99 0.186 0.157 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-10-13 99-12-28
2002 Mar 18
8
Philips Semiconductors
Product specification
Avionics LDMOS transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BLA1011-200
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Mar 18
9
Philips Semiconductors
Product specification
Avionics LDMOS transistor
NOTES
BLA1011-200
2002 Mar 18
10
Philips Semiconductors
Product specification
Avionics LDMOS transistor
NOTES
BLA1011-200
2002 Mar 18
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/06/pp12
Date of release: 2002
Mar 18
Document order number:
9397 750 09414

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